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| Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION With TO-3 package Complement to type 2N6609 High DC current gain Low saturation voltage High safe operating area APPLICATIONS Designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N3773 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total Power Dissipation Derate above 25ae Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 160 140 7 16 30 4 15 150 0.855 150 -65~200 ae UNIT V V V A A A A W W/ae ae Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Second breakdown collector current With base forward biased CONDITIONS IC=0.2A ;IB=0 IC=8A; IB=0.8A IC=16A ;IB=3.2A IC=8A ; VCE=4V VCE=140V; IB=0 VCE=140V; VBE(off)=1.5V TC=150ae VEB=7V; IC=0 IC=8A ; VCE=4V IC=16A ; VCE=4V VCE=100Vdc,t=1.0s, Nonrepetitive 15 5 1.5 MIN 140 TYP. 2N3773 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBE ICEO ICEX IEBO hFE-1 hFE-2 Is/b MAX UNIT V 1.4 4.0 2.2 2.0 2.0 10.0 5.0 60 V V V mA mA mA A THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ae /W 2 Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2N3773 Fig.2 outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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